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FUMIMASA Horikiri
Research Center of Ion Beam Technology
Associate Professor

Researcher information

■ Research Keyword
  • Photo Electrochemical Etching
  • nitride semiconductor
  • パワーデバイス
  • RF Device
■ Field Of Study
  • Nanotechnology/Materials, Crystal engineering
  • Nanotechnology/Materials, Nano/micro-systems
  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment

Career

■ Career
  • Apr. 2025 - Present
    Hosei University, Research Center of Ion Beam Technology, Associate Professor
  • Apr. 2023 - Jan. 2025
    SUMITOMO CHEMICAL Co., Ltd., IT-related electronic and chemical sector, SCIOCS Division
  • Oct. 2022 - Mar. 2023
    SUMITOMO CHEMICAL Co., Ltd., HVPE Development Group
  • Jul. 2015 - Sep. 2022
    SCIOCS Co. Ltd., Business Development Department
  • Feb. 2013 - Jul. 2015
    Hitachi Metals, Ltd., Epi Technology Division
  • Apr. 2009 - Feb. 2013
    Hitachi Cable, Ltd., Advanced Research Center
  • Apr. 2006 - Mar. 2009
    Japan Society for the Promotion of Science, JSPS Research Fellow (DC1)
■ Educational Background
  • Apr. 2006 - Mar. 2009, Tohoku University, Graduate School of Engineering, Department of Mechanical and System Engineering
  • Apr. 2004 - Mar. 2006, Tohoku University, Graduate School of Engineering, Department of Mechanical and System Engineering
  • Apr. 2000 - Mar. 2004, Tohoku University, Faculty of Engineering, Department of Mechanical and System Engineering
■ Member History
  • Apr. 2020 - Present
    Committee Members, JSAP The Advanced Power Semiconductors Division
  • Nov. 2018 - Present
    Technical Program Committee Members
  • Feb. 2024 - Aug. 2024
    Steering Committee, 15th Topical Workshop on Heterostructure Microelectronics (TWHM2024)
  • Apr. 2019 - Mar. 2020
    幹事, 応用物理学会 結晶工学分科会

Research activity information

■ Award
  • Sep. 2018
    The Japan Society of Applied Physics, JSAP Outstanding Paper Award
    Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates
    Hajime Fujikura;Taichiro Konno;Takehiro Yoshida;Fumimasa Horikiri
  • Mar. 2009
    Tohoku University, Dean's Award from the Graduate School of Engineering
■ Paper
■ Books and other publications
■ Lectures, oral presentations, etc.
  • GaNパワーデバイスの要素技術　　　　　　　　　　　　　　　
    堀切文正
    日本学術振興会 R025先進薄膜界面機能創成委員会 2月定例会, 『パワー半導体の最新動向 ～シリコンパワー半導体、および次世代材料』, 27 Feb. 2023, [Invited]
  • コンタクトレス光電気化学(PEC)エッチングを用いたリセスゲートHEMTの作製
    堀切文正; 福原昇; 渡久地政周; 三輪和希; 成田好伸; 市川磨; 磯野僚多; 田中丈士; 佐藤威友
    電子情報通信学会 研究会, 31 Jan. 2020, [Invited]
  • GaN ウエットエッチング
    堀切文正
    2019年第80回応用物理学会秋季学術講演会 シンポジウム『界窒化物半導体エッチング技術～高制御性と低損傷性を求めて～』, 20 Sep. 2019, [Invited]
  • GaN Wet Etching Process for Power and RF Devices
    Fumimasa Horikiri; Noboru Fukuhara; Hiroshi Ohta; Naomi Asai; Yoshinobu Narita; Takehiro Yoshida; Tomoyoshi Mishima; Masachika Toguchi; Kazuki Miwa; Taketomo Sato
    2019 International Conference on Solid State Devices and Materials (SSDM2019), 05 Sep. 2019, [Invited]
  • GaN Wet Etching Process　　　　　　　　　　　　　　　
    Fumimasa Horikiri; Noboru Fukuhara; Hiroshi Ohta; Naomi Asai; Yoshinobu Narita; Takehiro Yoshida; Tomoyoshi Mishima; Masachika Toguchi; Kazuki Miwa; Taketomo Sato
    13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019), 29 Aug. 2019, [Invited]
  • GaN Wet Etching Process for Power and RF Devices
    Fumimasa Horikiri; Noboru Fukuhara; Hiroshi Ohta; Naomi Asai; Yoshinobu Narita; Takehiro Yoshida; Tomoyoshi Mishima; Masachika Toguchi; Kazuki Miwa; Taketomo Sato
    2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019), 03 Jul. 2019, [Invited]
  • 光電気化学反応を用いた GaNのウエットエッチングプロセス
    堀切文正
    NPFセミナー「省エネルギー社会に貢献するＧａＮ材料の将来とそのキープロセス技術」, 14 Mar. 2019, [Invited]
  • FT-IRによるGaNエピ層の 非破壊評価
    堀切文正
    応用物理学会結晶工学分科会 第23回結晶工学セミナー, 21 Dec. 2018, [Invited]
  • Recent progress in growth and characterization technologies for next generation GaN-on-GaN vertical devices　　　　　　　　　　　　　　　
    Fumimasa Horikiri; Hajime Fujikura; Yoshinobu Narita; Takehiro Yoshida
    The 4th E-MRS & MRS-J Bilateral Symposium – 2018, 16 Oct. 2018, [Invited]
  • GaN基板上GaNエピ層の FT-IRによる評価　　　　　　　　　　　　　　　
    堀切文正; 成田好伸; 吉田丈洋
    電子情報通信学会 研究会, 24 May 2018, [Invited]
  • 非鉛圧電薄膜の開発と角速度センサへの応用　　　　　　　　　　　　　　　
    堀切文正
    法政大学イオンビーム工学セミナー, 02 Mar. 2018, [Invited]
  • GaN基板上に作製したショットキーダイオードエピウエハの非接触C-V評価
    堀切文正
    日本セミラボ第3 回テクニカル セミナー, 16 Jun. 2017, 日本セミラボ, [Invited]
  • Development of free-standing GaN substrates and high breakdown voltage GaN p-n diodes
    Fumimasa Horikiri; Tomoyoshi Mishima
    ISPlasma2017/IC-PLANTS2017, 03 Mar. 2017, [Invited]
  • スパッタ法による(K,Na)NbO3非鉛圧電薄膜の開発 ~高性能KNN膜の作製と角速度センサへの応用~　　　　　　　　　　　　　　　
    堀切文正; 渡辺和俊; 柴田憲治
    第62回 CVD研究会, 08 Dec. 2015, [Invited]
  • KNN非鉛圧電薄膜の開発 ~高性能KNN膜の作製と角速度センサへの応用~　　　　　　　　　　　　　　　
    堀切文正; 渡辺和俊; 柴田憲治; 末永和史; 野口将希; 江良聡; 岡田和廣
    第62回 応用物理学会春季学術講演会, 12 Mar. 2015, [Invited]
  • (K,Na)NbO3 Lead-free Piezoelectric Films by Sputtering　　　　　　　　　　　　　　　
    Fumimasa Horikiri; Kenji Shibata; Kazufumi Suenaga; Kazutoshi Watanabe; Akira Nomoto; Masaki Noguchi; Tomoyoshi Mishima
    The 6th International Conference on the Science and Technology for Advanced Ceramics (STAC-6), [Invited]
■ Affiliated academic society
  • Jul. 2009 - Present
    The Japan Society of Applied Physics　　　　　　　　　　　　　　　
■ Research Themes
■ Industrial Property Rights
■ Social Contribution Activities
■ Media Coverage